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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 BTB1188M3 Features * Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A * Excellent current gain characteristics * Complementary to BTD1766M3 Symbol BTB1188M3 Outline SOT-89 BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits -40 -30 -5 -2 -5 0.5 Unit V V V A A W W C C (Note 1) 2 (Note 2) 150 -55~+150 Note : 1. Single Pulse , Pw=10ms 2. When mounting on a 40 x40 x0.7 mm ceramic board. BTB1188M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -30 -5 82 Typ. 100 50 Max. -1 -1 -1 560 Unit V V V A A V MHz pF Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : Page No. : 2/4 Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-0.1A VCE=-3V, IC=-0.5A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f =1MHz *Pulse Test : Pulse Width 380us, Duty Cycle2% Classification Of hFE Rank Range P 82~180 Q 120~270 R 180~390 S 270~560 BTB1188M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 10000 VCE(SAT)@IC=40IB VCE=6V Saturation Voltage---(mV) Current Gain---HFE 1000 100 VCE=3V VCE=1V IC=20IB IC=40IB 100 IC=10IB 10 1 10 100 1000 10000 10 1 Collector Current---IC(mA) 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 10000 Power Dissipation---PD(W) VCE(SAT )@IC=10IB 2.5 2 1.5 1 0.5 0 Power Derating Curves Saturation Voltage---(mV) See note 2 on page 1 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 200 Ambient Temperature---TA() BTB1188M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : Page No. : 4/4 Marking: 1 2 C 3 H BC* B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1188M3 CYStek Product Specification |
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